p-channel enhancement mode vertical dmos fet issue 2 ? september 94 features * 240 volt v ds *r ds(on) =9 w * low threshold applications * electronic hook switch refer to zvp4424a for graphs absolute maximum ratings. parameter symbol value unit drain-source voltage v ds -240 v continuous drain current at t amb =25c i d -200 ma pulsed drain current i dm -1 a gate source voltage v gs 40 v power dissipation at t amb =25c p tot 750 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ max. unit conditions. drain-source breakdown voltage bv dss -240 v i d =-1ma, v gs =0v gate-source threshold voltage v gs(th) -0.7 -1.4 -2.0 v id=-1ma, v ds = v gs gate-body leakage i gss 100 na v gs = 40v, v ds =0v zero gate voltage drain current i dss -10 -100 m a m a v ds =-240 v, v gs =0 v ds =-190v, v gs =0v, t=125c on-state drain current i d(on) -0.75 -1.0 a v ds =-10 v, v gs =-10v static drain-source on-state resistance r ds(on) 7.1 8.8 9 11 w w v gs =-10v,i d =-200ma v gs =-3.5v,i d =-100ma forward transconductance (1) (2) g fs 125 ms v ds =-10v,i d =-0.2a input capacitance (2) c iss 100 200 pf v ds =-25v, v gs =0v, f=1mhz common source output capacitance (2) c oss 18 25 pf reverse transfer capacitance (2) c rss 515pf turn-on delay time (2)(3) t d(on) 815ns v dd ?- 50v, i d =-0.25a, v gen =-10v rise time (2)(3) t r 815ns turn-off delay time (2)(3) t d(off) 26 40 ns fall time (2)(3) t f 20 30 ns (1) measured under pulsed conditions. width=300 m s. duty cycle 2% (2) sample test. (3) switching times measured with 50 w source impedance and <5ns rise time on a pulse generator e-line to92 compatible 3-439 ZVP4424C 3-436 g d s p-channel enhancement mode vertical dmos fet issue 2 ? september 94 features * 240 volt v ds *r ds(on) =9 w * low threshold applications * electronic hook switch absolute maximum ratings. parameter symbol value unit drain-source voltage v ds -240 v continuous drain current at t amb =25c i d -200 ma pulsed drain current i dm -1 a gate source voltage v gs 40 v power dissipation at t amb =25c p tot 750 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ max. unit conditions. drain-source breakdown voltage bv dss -240 v i d =-1ma, v gs =0v gate-source threshold voltage v gs(th) -0.7 -1.4 -2.0 v id=-1ma, v ds = v gs gate-body leakage i gss 100 na v gs = 40v, v ds =0v zero gate voltage drain current i dss -10 -100 m a m a v ds =-240 v, v gs =0 v ds =-190v, v gs =0v, t=125c on-state drain current i d(on) -0.75 -1.0 a v ds =-10 v, v gs =-10v static drain-source on-state resistance r ds(on) 7.1 8.8 9 11 w w v gs =-10v,i d =-200ma v gs =-3.5v,i d =-100ma forward transconductance (1) (2) g fs 125 ms v ds =-10v,i d =-0.2a input capacitance (2) c iss 100 200 pf v ds =-25v, v gs =0v, f=1mhz common source output capacitance (2) c oss 18 25 pf reverse transfer capacitance (2) c rss 515pf turn-on delay time (2)(3) t d(on) 815ns v dd ?- 50v, i d =-0.25a, v gen =-10v rise time (2)(3) t r 815ns turn-off delay time (2)(3) t d(off) 26 40 ns fall time (2)(3) t f 20 30 ns (1) measured under pulsed conditions. width=300 m s. duty cycle 2% (2) sample test. (3) switching times measured with 50 w source impedance and <5ns rise time on a pulse generator e-line to92 compatible zvp4424a d g s
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